An-Najah National University

Falah Mohammed

 

 
  • Friday, July 1, 2005
  • A Novel Silicon Schottky diode for Non-Linear Transmission Line (NLTL) applications
  • Published at:Not Found
  • <!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0cm; margin-bottom:.0001pt; text-align:right; mso-pagination:widow-orphan; direction:rtl; unicode-bidi:embed; font-size:12.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";} @page Section1 {size:612.0pt 792.0pt; margin:72.0pt 90.0pt 72.0pt 90.0pt; mso-header-margin:36.0pt; mso-footer-margin:36.0pt; mso-paper-source:0;} div.Section1 {page:Section1;} --> The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized series resistance. Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta (δ) doping profile, which results in strong nonlinear CV characteristics. The equivalent circuit model of the Schottky diode und
  • Bookmark and Share Email
     
  • Sunday, July 11, 2004
  • Characterisation of Schottky Varactor Diodes for Pulse Compression Circuits
  • Published at:Irish Signal and System Conference (ISSC2004)
  • <!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0cm; margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:12.0pt; mso-bidi-font-size:10.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";} @page Section1 {size:612.0pt 792.0pt; margin:70.85pt 70.85pt 70.85pt 70.85pt; mso-header-margin:36.0pt; mso-footer-margin:36.0pt; mso-paper-source:0;} div.Section1 {page:Section1;} --> The dispersive and attenuation properties of multilayer telecommunication line cards are discussed as part of 10 Gbit/s OC192 telecommunications systems. A number of different methodologies are described to compensate for dispersion, attenuation and general signal distortion within high bit rate electro-optic telecommunications systems. This work will report the use of pulse compression techniques to reduce distortion within conventional multilayer circuit boards. This is achieved using a non-linear transmission line which uses the no
  • Bookmark and Share Email
     
  • Saturday, May 10, 2003
  • Bandwidth improvement using Pulse compression within an electro optic system for high bit rate telecommunications
  • Published at:The first GCC Industrial Electrical & Electronics Conference
  •   The dispersive and attenuation properties of multilayer telecommunication line cards are discussed as part of 10 Gbit/s OC192 telecommunications systems. A number of different methodologies are described to compensate for dispersion, attenuation and general signal distortion within high bit rate electro-optic telecommunications systems. This work will report the use of pulse compression techniques to reduce distortion within conventional multilayer circuit boards. This is achieved using a non-linear transmission line which uses the non-linear capacitance-voltage (CV) characteristic of hyper-abrupt Schottky diodes to provide the non-linear function. The development of the Schottky diode based on silicon technology is reported and is explained. The special circuit topology chosen for this circuit enables both rising and falling edge compression. Using this approach the higher harmonic content of fast pulses is reconstructed and signal dispersion in the transmission line is compensated.
  • Bookmark and Share Email
     
  • Saturday, September 7, 2002
  • Design of Schottky diode using Silvaco™
  • Published at:High Frequency Postgraduate Student Colloquium, 2002.7th IEEE
  • The design and optimisation of a delta doped Schottky diode is reported in this paper. The thickness of each layer, area and the spacing between the Schottky contact and the ohmic contact are optimised using Silvaco™ to give the maximum change in capacitance and the lowest series resistance. A lumped equivalent circuit for the diode is described with an explanation of lumped parameter extraction after the fabrication process. This type of diode will be used for the design of nonlinear transmission lines (NLTLs) for pulse compression applications
  • Bookmark and Share Email
     

PROFILE

Falah Mohammed
HIgh Frequency Electronics
Falah Mohammed is presently an assistant professor in the School of Electrical and Electronic Engineering at Najah National University, Nablus. I received PhD from Queen's university, Belfast, UK in 2000.
 
Show Full ProfileEnglish CV
 
 
 
Please do not email me if you do not know me
Please do not e-mail me if you do not know me