http://blogs.najah.edu/author/falah-1974 An-Najah Blogs :: Falah Mohammed en-us Fri, 19 Apr 2024 23:12:54 IDT Fri, 19 Apr 2024 23:12:54 IDT [email protected] [email protected] http://blogs.najah.edu/staff/falah-1974/article/A-Novel-Silicon-Schottky-diode-for-Non-Linear-Transmission-Line-NLTL-applicationsPublished Articles -- Style Definitions pMsoNormal liMsoNormal divMsoNormal {mso-style-parent:; margin:0cm; margin-bottom:0001pt; text-align:right; mso-pagination:widow-orphan; direction:rtl; unicode-bidi:embed; font-size:120pt; font-family:Times New Roman; mso-fareast-font-family:Times New Roman;} @page Section1 {size:6120pt 7920pt; margin:720pt 900pt 720pt 900pt; mso-header-margin:360pt; mso-footer-margin:360pt; mso-paper-source:0;} divSection1 {page:Section1;} -- The design and simulation of a novel silicon Schottky diode for nonlinear transmission line NLTL applications is discussed in this paper The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator SSOI substrate for minimized series resistance Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta doping profile which results in strong nonlinear CV characteristics The equivalent circuit model of the Schottky diode under reverse bias conditions was extracted from the S-parameter measurement performed on the diode The measured CV characteristics show strong nonlinearity the junction capacitance varies from 182 to 475 fF as the reverse bias voltage is varied from 0 to -5 V A parasitic inductance of 40 pH was measured for the silicon Schottky diode which is much smaller than a comparable sized GaAs Schottky diode This small inductance is an advantage for the silicon Schottky diode offering improvement in the silicon NLTL performancehttp://blogs.najah.edu/staff/falah-1974/article/Characterisation-of-Schottky-Varactor-Diodes-for-Pulse-Compression-CircuitsPublished Articles -- Style Definitions pMsoNormal liMsoNormal divMsoNormal {mso-style-parent:; margin:0cm; margin-bottom:0001pt; mso-pagination:widow-orphan; font-size:120pt; mso-bidi-font-size:100pt; font-family:Times New Roman; mso-fareast-font-family:Times New Roman;} @page Section1 {size:6120pt 7920pt; margin:7085pt 7085pt 7085pt 7085pt; mso-header-margin:360pt; mso-footer-margin:360pt; mso-paper-source:0;} divSection1 {page:Section1;} -- The dispersive and attenuation properties of multilayer telecommunication line cards are discussed as part of 10 Gbits OC192 telecommunications systems A number of different methodologies are described to compensate for dispersion attenuation and general signal distortion within high bit rate electro-optic telecommunications systems This work will report the use of pulse compression techniques to reduce distortion within conventional multilayer circuit boards This is achieved using a non-linear transmission line which uses the non-linear capacitance-voltage CV characteristic of hyper-abrupt Schottky diodes to provide the non-linear function The development of the Schottky diode based on silicon technology is reported and is explained The special circuit topology chosen for this circuit enables both rising and falling edge compression Using this approach the higher harmonic content of fast pulses is reconstructed and signal dispersion in the transmission line is compensatedhttp://blogs.najah.edu/staff/falah-1974/article/Non-linear-Transmission-line-NLTL-for-pulse-compression-and-improvement-of-the-eye-diagram-in-25-Gbits-communication-systemsPublished Articles The dispersive and attenuation properties of multilayer telecommunication line cards are discussed as part of 10 Gbits OC192 telecommunications systems A number of different methodologies are described to compensate for dispersion attenuation and general signal distortion within high bit rate electro-optic telecommunications systems This work will report the use of pulse compression techniques to reduce distortion within conventional multilayer circuit boards This is achieved using a non-linear transmission line which uses the non-linear capacitance-voltage CV characteristic of hyper-abrupt Schottky diodes to provide the non-linear function The development of the Schottky diode based on silicon technology is reported and is explained The special circuit topology chosen for this circuit enables both rising and falling edge compression Using this approach the higher harmonic content of fast pulses is reconstructed and signal dispersion in the transmission line is compensatedhttp://blogs.najah.edu/staff/falah-1974/article/Design-of-Schottky-diode-using-SilvacotradePublished ArticlesThe design and optimisation of a delta doped Schottky diode is reported in this paper The thickness of each layer area and the spacing between the Schottky contact and the ohmic contact are optimised using Silvaco to give the maximum change in capacitance and the lowest series resistance A lumped equivalent circuit for the diode is described with an explanation of lumped parameter extraction after the fabrication process This type of diode will be used for the design of nonlinear transmission lines NLTLs for pulse compression applicationshttp://blogs.najah.edu/staff/falah-1974/article/High-data-rate-pulse-regeneration-using-Non-Linear-Transmission-Line-technology-NLTLPublished ArticlesThe application of Non-Linear Transmission Line NLTL technology to the restoration of signal integrity in electro-optic back-planes technology is reported The non-linear transmission line synthesized uses coplanar wave-guide because it has better performance than the micro-strip line