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  • Thursday, July 14, 1988
  • The Electronic Structure of Ga1-xAlxAs Alloy by The Recursion Method
  • Published at:Turkish Journal of Physics 13 (1989)229-238
  •        The electronic structure calculation of GaAlAs using the recursion method is reported. A five orbitals ,sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian.

           The local density of states are calculated for Ga,Al and As-sites in a cluster of 216 atoms.

    The results are in a resonable good agreement with previous calculations.

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Musa El-Hasan
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