- Thursday, July 14, 1988
- The Electronic Structure of Ga1-xAlxAs Alloy by The Recursion Method
- Published at:Turkish Journal of Physics 13 (1989)229-238
The electronic structure calculation of GaAlAs using the recursion method is reported. A five orbitals ,sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian.
The local density of states are calculated for Ga,Al and As-sites in a cluster of 216 atoms.
The results are in a resonable good agreement with previous calculations.