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  • Tuesday, December 1, 1998
  • Electronic structure of GaxIn1-xAsySb1-y quaternary alloy by recursion method
  • Published at:Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics Volume: 20 Issue: 12 Pages: 1871-1879 Published: Dec 1998
  • This work reports the electronic structure of GaInAsSb quaternary alloy by recursion method. A five-orbital sp(3)s* per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states (LDOS), integrated density of states (IDOS) and structural energy (ST.E) were calculated for Ga, In, As and Sb sites in Ga0.5In0.5As0.5Sb0.5 and GaInAsSb lattice matched to GaAs and the same alloy lattice matched to GaSb. There are 216 atoms in our cluster arranged in a zincblend structure. The results are in good agreement with available information about the alloy.

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