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An-Najah Blogs :: en-usSat, 24 Oct 2020 22:24:54 ISTSat, 24 Oct 2020 22:24:54 ISTwebmaster@najah.eduwebmaster@najah.eduThe electronic band structure of InN, InAs and InSb compounds http://blogs.najah.edu/staff/emp_2122/article/The-electronic-band-structure-of-InN-InAs-and-InSb-compounds--1Published ArticlesThe electronic band structure of InN InAs and InSb has been investigated by ETB The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN InAs and InSb It has been found that the present ETB parameters can produce the band structure of the compounds successfully
Journal of Materials Science Volume 43 Number 8 April 2008 2935-2946
http:wwwspringerlinkcomindexR47236J6V6125R86pdfCR-39 detector compared with Kodalpha film type (LR115) in terms of radon concentration http://blogs.najah.edu/staff/emp_2122/article/CR-39-detector-compared-with-Kodalpha-film-type-LR115-in-terms-of-radon-concentration-Published ArticlesCR-39 detectors and Kodalpha film type LR115 were compared in terms of radon radiation concentration Thirteen CR-39 detectors with the same number of Kodalpha film type LR115 were used in this study The correlation factor between the radon concentrations obtained by the two groups of detectors was found to be 099 Detector time efficiency DTE was calculated for both types of detectors DTE of Kodalpha film is larger than that of CR-39 detector and this indicates that LR115 is more efficient and sensitive for radon radiation than CR-39 detector
Nuclear Instruments and Methods in Physics Research Section A: Accelerators Spectrometers Detectors and Associated Equipment Volume 574 Issue 2 1 May 2007 Pages 289-291
http:dxdoiorg101016jnima200701168Energy Gap Dependence on Anion Concentration for Gaxin1-Xasyp1-Y Quaternary Alloy by Recursion Methodhttp://blogs.najah.edu/staff/emp_2122/article/Energy-Gap-Dependence-on-Anion-Concentration-for-Gaxin1-Xasyp1-Y-Quaternary-Alloy-by-Recursion-MethodPublished ArticlesThree terminators have been tested square root terminator quadreture terminator and linear terminator it was found that the linear terminator is the best so it was used in calculating local density of states LDOS and its orbital decomposition alloy average density of states and energy gap for different anion concentrations for InP lattice matched alloy The results were compared with our previous calculations of LDOS and results from other methods Energy gap was compared with experimental measurements A five orbital sp3s per atom model was used in the tight-binding representation of the Hamiltonian
Modern Physics Letters B MPLB
Year: 2004 Vol: 18 Issue: 18 10 August 2004
Page: 955 - 962
http:dxdoiorg101142S0217984904007463
Electronic structure of GaxIn1-xAsyP1-y quaternary alloy by recursion methodhttp://blogs.najah.edu/staff/emp_2122/article/Electronic-structure-of-GaxIn1-xAsyP1-y-quaternary-alloy-by-recursion-methodPublished ArticlesThe electronic structure of GaxIn1-xAsyP1-y quaternary alloy calculated by recursion method is reported A five orbitals sp3s per atom model was used in the tight-binding representation of the Hamiltonian
The local density of states and its orbital decomposition LDOS integrated density of states IDOS and structural energy STE were calculated for Ga In As and P sites in Ga05In05As05P05 GaInAsP lattice matched to InP and lattice matched to GaAs as well There are 216 atoms arranged in a zinc-blend structure The calculated quantities are as expected for such systemsElectronic structure of GaxIn1-xAsySb1-y quaternary alloy by recursion methodhttp://blogs.najah.edu/staff/emp_2122/article/Electronic-structure-of-GaxIn1-xAsySb1-y-quaternary-alloy-by-recursion-methodPublished ArticlesThis work reports the electronic structure of GaInAsSb quaternary alloy by recursion method A five-orbital sp3s per atom model was used in the tight-binding representation of the Hamiltonian The local density of states LDOS integrated density of states IDOS and structural energy STE were calculated for Ga In As and Sb sites in Ga05In05As05Sb05 and GaInAsSb lattice matched to GaAs and the same alloy lattice matched to GaSb There are 216 atoms in our cluster arranged in a zincblend structure The results are in good agreement with available information about the alloyThe Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Methodhttp://blogs.najah.edu/staff/emp_2122/article/The-Electronic-Structure-of-Gax-In-1-x-As-and-InASx-P1-x-Using-the-Recursion-MethodPublished ArticlesThe calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported A five-orbitals sp3s per atom model is used in the tight-binding representation of the Hamiltonian The local density of states is calculated for Ca In As and P-sites in a cluster of 216 atoms The results are in good agreement with other calculationsThe Electronic Structure of Ga1-xAlxAs Alloy by The Recursion Methodhttp://blogs.najah.edu/staff/emp_2122/article/The-Electronic-Structure-of-Ga1-xAlxAs-Alloy-by-The-Recursion-MethodPublished Articles The electronic structure calculation of GaAlAs using the recursion method is reported A five orbitals sp3s per atom model is used in thetight-binding representation of the Hamiltonian
The local density of states are calculated for GaAl and As-sites in a cluster of 216 atoms
The results are in a resonable good agreement with previous calculationsphysicshttp://blogs.najah.edu/staff/emp_2122/article/physicsOn Going ResearchesCurrent research interest :
Randon concentration in air water and soil Electromagnetic wave pollution
mobile phone stations HT power lines
Magnetic properties of magnetic semiconductors or diluted magnetic
semiconductors DMS by Recursion method and FP-LAPW method